| PART |
Description |
Maker |
| MCM72BF64SG66 MCM72BF32 MCM72BF32SG60 MCM72BF32SG6 |
256KB and 512KB BurstRAM Secondary Cache Module for Pentium
|
MOTOROLA[Motorola, Inc]
|
| MCM72CF64SG66 MCM72CF32 MCM72CF32SG66 |
256KB and 512KB BurstRAM Secondary Cache Module for Pentium
|
MOTOROLA[Motorola, Inc]
|
| MPC2104 MPC2105 |
(MPC2104 - MPC2107) 256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
|
Motorola, Inc.
|
| M27C400 6674 M27C400-80XF6TR M27C400-100B1TR M27C4 |
AML42 Series, Solid State Indicator, Square, Compact Style, Lighted, 1 LED, Snap in panel mount 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM
From old datasheet system
|
Advanced Micro Devices, Inc.
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M29W400DB45M1 M29W400DB45M1E M29W400DB45M1F M29W40 |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| CXK79M72C165GB CXK79M36C165GB |
18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)
|
Sony Corporation
|
| M29F400T |
4Mbit (512Kb x8 or 256Kb x16, Boot Block) Single Supply Flash Memory(4Mb闪速存储器) 4Mb12KB的x8256Kb的x16插槽，引导块）单电源闪存4Mb的闪速存储器
|
意法半导
STMicroelectronics N.V.
|
| LPC1774FBD208 LPC1776FBD208 LPC1778FBD208 LPC1777F |
128kB flash, 40kB SRAM, USB, LQFP208 package
256kB flash, 80kB SRAM, Ethernet, USB, LQFP208 package
512kB flash, 96kB SRAM, Ethernet, USB, LQFP208 package
512kB flash, 96kB SRAM, USB, LQFP208 package
512kB flash, 96kB SRAM, Ethernet, USB, LCD, LQFP144 package
512kB flash, 96kB SRAM, Ethernet, USB, LCD, LQFP208 package
512kB flash, 96kB SRAM, Ethernet, USB, LCD, TFBGA208 package
512kB flash, 96kB SRAM, Ethernet, USB, LQFP144 package
512kB flash, 96kB SRAM, Ethernet, USB, TFBGA208 package
|
NXP Semiconductors
|
| LH28F400BVE-TL85 LHF40V01 |
4MB (512KB x 8/256KB x 16) SmartVoltage Flash Memory(4M512Kx 8/256K位x 16)闪速存储器)
Photoelectric Sensor; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Time Range:1.5 sec. to 15 sec.; Timing Function:On-Delay and Off-Delay 4分快闪记忆体
|
Sharp Corporation
Sharp, Corp.
|
| M27W401 M27W401-100B6TR M27W401-100F6TR M27W401-10 |
4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM
Quadruple 1-of-2 Data Selectors/Multiplexers 16-SOIC 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
Quadruple 1-of-2 Data Selectors/Multiplexers 16-PDIP 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
Quadruple 1-of-2 Data Selectors/Multiplexers 16-SO 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27C405 4378 M27C405-90N6TR M27C405-100B1TR M27C40 |
4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公512KB的存储器
4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公12KB的存储器
Aluminum Electrolytic Radial Lead 5mm Length Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 6.3x5 mm; Packaging: Bulk 4兆位× 8检察官办公12KB的存储器
From old datasheet system
4 Mbit (512Kb x 8) OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| CY14B104LA-ZS25XIT CY14B104NA-BA20XI CY14B104NA-BA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO44
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
